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APT66M60L

Microsemi
Part Number APT66M60L
Manufacturer Microsemi
Description N-Channel MOSFET
Published Nov 9, 2015
Detailed Description APT66M60B2 APT66M60L 600V, 70A, 0.09Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch...
Datasheet PDF File APT66M60L PDF File

APT66M60L
APT66M60L

Overview
APT66M60B2 APT66M60L 600V, 70A, 0.
09Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability.
Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance.
The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
T-Ma x TM TO-264 APT66M60B2 APT66M60L D Single die MOSFET G S FEATURES • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters Absolute Maximum Ratings Symbol Parameter ID Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C IDM Pulsed Drain Current 1 VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy 2 IAR Avalanche Current, Repetitive or Non-Repetitive Thermal and Mechanical Characteristics Symbol Characteristic PD RθJC Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance RθCS TJ,TSTG Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.
6mm from case) WT Package Weight Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Ratings 70 44 245 ±30 1845 33 Unit A V mJ A Min Typ Max Unit 1135 W 0.
11 °C/W 0.
11 -55 150 °C 300 0.
22 oz 6.
2 g 10 in·lbf 1.
1 N·m Microsemi Website - http://www.
microsemi.
com 050-8092 Rev E 8-2011 Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test C...


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