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TSF16N50M

Truesemi
Part Number TSF16N50M
Manufacturer Truesemi
Description 500V N-Channel MOSFET
Published Nov 10, 2015
Detailed Description TSP16N50M / TSF16N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced...
Datasheet PDF File TSF16N50M PDF File

TSF16N50M
TSF16N50M

Overview
TSP16N50M / TSF16N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 16.
0A, 500V, RDS(on) = 0.
38Ω @VGS = 10 V • Low gate charge ( typical 45nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Av...


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