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APT1201R4BFLL

Microsemi
Part Number APT1201R4BFLL
Manufacturer Microsemi
Description Power MOSFET
Published Nov 10, 2015
Detailed Description APT1201R4BFLL(G) APT1201R4SFLL(G) 1200V 9A 1.50 Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, ...
Datasheet PDF File APT1201R4BFLL PDF File

APT1201R4BFLL
APT1201R4BFLL

Overview
APT1201R4BFLL(G) APT1201R4SFLL(G) 1200V 9A 1.
50 Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching losses are addressed and Qg.
Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with Microsem's patented metal gate structure.
TO-247 D3PAK • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified.
APT1201R4B_SFLL UNIT VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 1200 9 36 ±30 ±40 300 2.
40 Volts Amps Volts Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 9 30 1210 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 4.
5A) Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 1200 3 1.
50 250 1000 ±100 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.
microsemi.
com UNIT Volts Ohms µA nA Volts 050-7392 Rev C 2-20...


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