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STU456A

SamHop Microelectronics
Part Number STU456A
Manufacturer SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Nov 10, 2015
Detailed Description STU/D456AGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor ...
Datasheet PDF File STU456A PDF File

STU456A
STU456A

Overview
STU/D456AGreen Product Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.
1 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 23 @ VGS=10V 40V 30A 36 @ VGS=4.
5V FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G S STU SERIES TO-252AA(D-PAK) G DS STD SERIES TO-251S(I-PAK) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TC=25°C TC=70°C IDM -Pulsed b EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation a TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Limit 40 ±20 30 24 88 30 42 27 -55 to 150 3 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice.
1 Nov,17,2014 www.
samhop.
com.
tw STU/D456A Ver 1.
1 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=32V , VGS=0V VGS= ±20V , VDS=0V 40 V 1 uA ±100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=15A VGS=4.
5V , ID=12A VDS=10V , ID=15A VDS=20V,VGS=0V f=1.
0MHz VDD=20V ID=1A VGS=10V RGEN= 6 ohm VDS=20V,ID=15A,VGS=10V VDS=20V,ID=15A,VGS=4.
5V VDS=20V,ID=15A, VGS=10V 1 1.
9 3 V 18.
5 23 m ohm 26.
5 36 m ohm 32 ...


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