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IPD170N04NG

Infineon Technologies
Part Number IPD170N04NG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 10, 2015
Detailed Description Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters •...
Datasheet PDF File IPD170N04NG PDF File

IPD170N04NG
IPD170N04NG

Overview
Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant Type IPD170N04N G Product Summary V DS R DS(on),max ID IPD170N04N G 40 V 17 mΩ 30 A Package Marking PG-TO252-3 170N04N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 ID I D,pulse I AS E AS V GS V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C T C=25 °C T C=25 °C I D=30 A, R GS=25 Ω Value 30 23 210 30 5 ±20 Unit A mJ V Rev.
1.
0 page 1 2007-12-11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipati...


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