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IPF060N03LG

Infineon Technologies
Part Number IPF060N03LG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 10, 2015
Detailed Description Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • ...
Datasheet PDF File IPF060N03LG PDF File

IPF060N03LG
IPF060N03LG

Overview
Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating • Halogen-free according to IEC61249-2-21 * IPD060N03L G IPS060N03L G IPF060N03L G IPU060N03L G Product Summary V DS R DS(on),max ID 30 V 6 mΩ 50 A Type IPD060N03L G • Avalanche rated • Pb-free plating; RoHS compliant IPF060N03L G IPS060N03L G IPU060N03L G Package PG-TO252-3 PG-TO252-3-23 PG-TO251-3-11 PG-TO251-3 Marking 060N03L 060N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions 060N03L 060N03L Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C Pulsed drain current2) I D,pulse V GS=4.
5 V, T C=100 °C T C=25 °C Avalanche current, single pulse3) ...


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