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SPD04P10PG

Infineon Technologies
Part Number SPD04P10PG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 10, 2015
Detailed Description SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating...
Datasheet PDF File SPD04P10PG PDF File

SPD04P10PG
SPD04P10PG

Overview
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD04P10P G -100 V 1Ω -4 A PG-TO252-3 Type Package SPD04P10P G PG-TO252-3 Marking 04P10P Lead free Yes Packing Non dry Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions I D T C=25 °C T C=100 °C Value -4 -2.
8 Unit A Pulsed drain current I D,pulse V GS=-10 V, I D=-2.
8 A -16 Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class E AS I D=-4 A, R GS=25 Ω V GS P tot T C=25 °C T j, T stg JESD22-A114-HBM Soldering temperature IEC climatic category; DIN IEC 68-1 57 ±20 38 -55 .
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.
175 1A (250 V to 500 V) 260 °C 55/175/56 mJ V W °C Rev 1.
6 page 1 2012-09-10 Parameter Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient Symbol Conditions SPD04P10P G min.
Values typ.
Unit max.
R thJC R thJA minimal footprint, steady state 6 cm2 cooling area1), steady state - - 3.
9 K/W - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-380 µA -100 -2.
1 -3.
0 -V -4 I DSS V DS=-100 V, V GS=0 V, T j=25 °C - -0.
1 -1 µA I GSS V DS=-100 V, V GS=0 V, T j=150 °C V GS=-20 V, V DS=0 V - -10 -100 -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-2.
8 A - 644 1000 mΩ Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-2.
8 A 1.
2 2.
4 -S 1) Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Rev ...


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