DatasheetsPDF.com

D4NK50Z

STMicroelectronics
Part Number D4NK50Z
Manufacturer STMicroelectronics
Description N-Channel MOSFET
Published Nov 11, 2015
Detailed Description STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected Sup...
Datasheet PDF File D4NK50Z PDF File

D4NK50Z
D4NK50Z

Overview
STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.
4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z STP4NK50ZFP STD4NK50Z STD4NK50Z-1 500 V < 2.
7 Ω 3 A 45 W 500 V < 2.
7 Ω 3 A 20 W 500 V < 2.
7 Ω 3 A 45 W 500 V < 2.
7 Ω 3 A 45 W s TYPICAL RDS(on) = 2.
3 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
TO-220 3 1 DPAK 3 2 1 TO-220FP IPAK 3 2 1 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING ORDERING INFORMATION SALES TYPE MARKING STP4NK50Z P4NK50Z STP4NK50ZFP P4NK50ZFP STD4NK50ZT4 D4NK50Z STD4NK50Z-1 D4NK50Z December 2002 PACKAGE TO-220 TO-220FP DPAK IPAK PACKAGING TUBE TUBE TAPE & REEL TUBE 1/13 STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.
5KΩ) dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Operating Junction Temperature Tstg Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤3 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum te...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)