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BSC016N03LSG

Infineon Technologies
Part Number BSC016N03LSG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 12, 2015
Detailed Description BSC016N03LS G OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC convert...
Datasheet PDF File BSC016N03LSG PDF File

BSC016N03LSG
BSC016N03LSG

Overview
BSC016N03LS G OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel Product Summary V DS R DS(on),max ID 30 V 1.
6 mΩ 100 A PG-TDSON-8 • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant; • Halogen-free according to IEC61249-2-21 Type Package Marking BSC016N03LS G PG-TDSON-8 016N03LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 100 A 100 Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=50 K/W2) I D,pulse I AS E AS dv /dt...


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