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IPP230N06L3G

Infineon Technologies
Part Number IPP230N06L3G
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 12, 2015
Detailed Description Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for ...
Datasheet PDF File IPP230N06L3G PDF File

IPP230N06L3G
IPP230N06L3G


Overview
Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 IPB230N06L3 G IPP230N06L3 G Product Summary VDS RDS(on),max ID 60 V 23 mW 30 A Type IPB230N06L3 G IPP230N06L3 G Package Marking PG-TO263-3 230N06L PG-TO220-3 230N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg 1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev.
2.
2 page 1 Value 30 21 120 13 ±20 36 -55 .
.
.
175 Unit A mJ V W °C 2012-12-19 IPB230N06L3 G IPP230N06L3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm² cooling area4) min.
Values typ.
Unit max.
- - 4.
2 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=11 µA 1.
2 1.
7 2.
2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.
1 1 µA V DS=60 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current Drain-source on-state resistance I GSS V GS=20 V, V DS=0 V R DS(on) V GS=10 V, I D=30 A - 1 100 nA - 19.
0 23 mW V GS=4.
5 V, I D=15 A - 28.
6 40.
8 Drain-source on-state resistance Gate resistance Transconductance R DS(on) V GS=...


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