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BSC028N06NS

Infineon Technologies
Part Number BSC028N06NS
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 12, 2015
Detailed Description Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested ...
Datasheet PDF File BSC028N06NS PDF File

BSC028N06NS
BSC028N06NS

Overview
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.
g.
sync.
rec.
• 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC028N06NS Product Summary VDS RDS(on),max ID Qoss QG(0.
.
10V) 60 2.
8 100 43 37 V mW A nC nC PG-TDSON-8 Type BSC028N06NS Package PG-TDSON-8 Marking 028N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C 100 A V GS=10 V, T C=100 °C 83 V GS=10 V, T C=25 °C, R thJA =50K/W 2) 23 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W 100 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is ve...


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