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IPB014N06N

Infineon Technologies
Part Number IPB014N06N
Manufacturer Infineon Technologies
Description Power Transistor
Published Nov 14, 2015
Detailed Description Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior t...
Datasheet PDF File IPB014N06N PDF File

IPB014N06N
IPB014N06N

Overview
Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID QOSS QG(0V.
.
10V) IPB014N06N 60 V 1.
4 mW 180 A 119 nC 106 nC Type IPB014N06N Package TO263-7 Marking 014N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V,T C=100 °C 180 A 180 V GS=10 V, T C=25 °C, R thJA =50K/W 34 Pulsed drain current2) I D,pulse T C=25 °C 720 Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W 420 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Rev.
2.
2 page 1 2012-12-20 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=50 K/W Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 IPB014N06N Value 214 3.
0 -55 .
.
.
175 55/175/56 Unit W °C Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA minimal footprint 6 cm² cooling area4) - - 0.
7 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=143 µA 2.
1 2.
8 3.
3 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.
5 1 µA V DS=60 V, V GS=0 V, T j=125 °C - 10 ...


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