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IPP030N10N3G

Infineon Technologies
Part Number IPP030N10N3G
Manufacturer Infineon Technologies
Description Power Transistor
Published Nov 14, 2015
Detailed Description IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R D...
Datasheet PDF File IPP030N10N3G PDF File

IPP030N10N3G
IPP030N10N3G

Overview
IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP030N10N3 G IPI030N10N3 G 100 V 3 mW 100 A Package Marking PG-TO220-3 030N10N PG-TO262-3 030N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=100 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 Value 100 100 400 1000 ±20 300 -55 .
.
.
175 55/175/56 Unit A mJ V W °C Rev.
2.
1 page 1 2011-07-18 IPP030N10N3 G IPI030N10N3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) min.
Values typ.
Unit max.
- - 0.
5 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=275 µA 2 2.
7 3.
5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.
1 1 µA V DS=100 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 2.
6 3 mW V GS=6 V, I D=50 A - 3.
1 4.
8 Gate resistance RG - 1.
9 - W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=100 A 94 188 -S 3) Device on 40 mm x 40...


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