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BUK7520-55A

Philips
Part Number BUK7520-55A
Manufacturer Philips
Description standard level FET
Published Nov 16, 2015
Detailed Description BUK7520-55A; BUK7620-55A TrenchMOS™ standard level FET Rev. 01 — 18 January 2001 Product specification 1. Description ...
Datasheet PDF File BUK7520-55A PDF File

BUK7520-55A
BUK7520-55A

Overview
BUK7520-55A; BUK7620-55A TrenchMOS™ standard level FET Rev.
01 — 18 January 2001 Product specification 1.
Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK7520-55A in SOT78 (TO-220AB) BUK7620-55A in SOT404 (D 2-PAK).
2.
Features s TrenchMOS™ technology s Q101 compliant s 175 °C rated s Standard level compatible.
3.
Applications s Automotive and general purpose power switching: c c x 12 V and 24 V loads x Motors, lamps and solenoids.
4.
Pinning information Table 1: Pinning - SOT78, SOT404, simplified outline and symbol Pin Description Simplified outline 1 gate (g) 2 drain (d) mb 3 source (s) mb mounting base; connected to drain (d) mb MBK106 123 SOT78 (TO-220AB) 2 1 3 MBK116 SOT404 (D2-PAK) Symbol d g MBB076 s Philips Semiconductors BUK7520-55A; BUK7620-55A TrenchMOS™ standard level FET 5.
Quick reference data Table 2: Quick reference data Symbol Parameter VDS ID Ptot Tj RDSon drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance 6.
Limiting values Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 IDM peak drain current Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Ptot total power dissipation Tstg storage temperature Tj operating junction temperature Source-drain diode Tmb = 25 °C; Figure 1 IDR reverse drain current (DC) IDRM pulsed reverse drain current Avalanche ruggedness Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs WDSS non-repetitive avalanche energy unclamped inductive l...


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