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IRGP4069-EPbF

International Rectifier
Part Number IRGP4069-EPbF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Nov 17, 2015
Detailed Description INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Juncti...
Datasheet PDF File IRGP4069-EPbF PDF File

IRGP4069-EPbF
IRGP4069-EPbF

Overview
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package PD - 97426 IRGP4069PbF IRGP4069-EPbF C G E n-channel VCES = 600V IC(Nominal) = 35A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ.
= 1.
6V Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel ...


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