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SiHLL110

Vishay
Part Number SiHLL110
Manufacturer Vishay
Description Power MOSFET
Published Nov 19, 2015
Detailed Description www.vishay.com IRLL110, SiHLL110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qg...
Datasheet PDF File SiHLL110 PDF File

SiHLL110
SiHLL110

Overview
www.
vishay.
com IRLL110, SiHLL110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.
0 V 6.
1 2.
6 3.
3 Single 0.
54 D SOT-223 D S D G Marking code: LB G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching Available • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
 The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.
Power dissipation of greater than 1.
25 W is possible in a typical surface mount application.
ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free SOT-223 Tube IRLL110PbF SOT-223 Tape and Reel SiHLL110TR-GE3 IRLL110TRPbF a Note a.
See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VGS at 5.
0 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Linear Derating Factor (PCB Mount) e Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) e Peak Diode Recovery dV/dt c TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d for 10 s TJ, Tstg Notes a.
Repetitive rat...


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