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IPD90N04S3-04

Infineon Technologies
Part Number IPD90N04S3-04
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 20, 2015
Detailed Description OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p...
Datasheet PDF File IPD90N04S3-04 PDF File

IPD90N04S3-04
IPD90N04S3-04

Overview
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD90N04S3-04 Product Summary V DS R DS(on),max ID 40 V 3.
6 mΩ 90 A PG-TO252-3-11 Type IPD90N04S3-04 Package Marking PG-TO252-3-11 QN0404 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=90 A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and...


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