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OSF12N60C

OCENME
Part Number OSF12N60C
Manufacturer OCENME
Description 600V N-Channel MOSFET
Published Nov 21, 2015
Detailed Description TOSSPP1122NN6600MC / TOSSFF1122NN6600MC 600V N-Channel MOSFET General Description This Power MOSFET is produced using o...
Datasheet PDF File OSF12N60C PDF File

OSF12N60C
OSF12N60C

Overview
TOSSPP1122NN6600MC / TOSSFF1122NN6600MC 600V N-Channel MOSFET General Description This Power MOSFET is produced using oTcrueensmeem‘si‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 12.
0A, 600V, RDS(on) = 0.
650Ω @VGS = 10 V • Low gate charge ( typical 52nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability {D GDS TO-220 GD S TO-220F ● ◀▲ {G ● ● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature.
OTSSPP1122NN6600MC TOSSFF1122NN6600MC 600 12.
0 12.
0* 7.
4 7.
4* 48 48 * ± 30 865 23.
1 4.
5 231 54 1.
85 0.
43 -55 to +150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient OSP12N60C 0.
54 0.
5 62.
5 OSF12N60C 2.
33 -62.
5 Units V A A A V mJ mJ V/ns W W/°C °C °C Units °C/W °C/W °C/W OSP12N60C / OSF12N60C Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage...


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