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SiHLZ34S

Vishay
Part Number SiHLZ34S
Manufacturer Vishay
Description Power MOSFET
Published Nov 21, 2015
Detailed Description IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) ...
Datasheet PDF File SiHLZ34S PDF File

SiHLZ34S
SiHLZ34S

Overview
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) 60 VGS = 5 V 35 Qgs (nC) 7.
1 Qgd (nC) 25 Configuration Single 0.
05 I2PAK (TO-262) D2PAK (TO-263) D G DS G D S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb) free and Halogen-free Lead (Pb) free D2PAK (TO-263) SiHLZ34S-GE3 - FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ34S, SiHLZ34S) • Low-Profile Through-Hole (IRLZ34L, SiHLZ34L) • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast swichting speed and ruggedized device design that Power MOSFETs are known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0 W in a typical surface mount application.
The through-hole version (IRLZ34L, SiHLZ34L) is available for low-profile applications.
I2PAK (TO-262) - IRLZ34LPbF SiHLZ34L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc VGS at 5 V TC = 25 °C TC = 100 °C TC = 25 °C TA = 25 °C VDS VGS ID IDM EAS PD dV/dt Operating Junction and Storage Temperatur...


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