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IRLU014

Vishay Siliconix
Part Number IRLU014
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Nov 21, 2015
Detailed Description www.vishay.com IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (...
Datasheet PDF File IRLU014 PDF File

IRLU014
IRLU014

Overview
www.
vishay.
com IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.
0 V 8.
4 3.
5 6.
0 Single 0.
20 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Surface Mount (IRLR014, SiHLR014) • Straight Lead (IRLU014, SiHLU014) • Available in Tape and Reel • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface mount applications.
ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.
See device orientation.
DPAK (TO-252) SiHLR014-GE3 IRLR014PbF SiHLR014-E3 DPAK (TO-252) IRLR014TRPbFa SiHLR014T-E3a DPAK (TO-252) SiHLR014TRL-GE3 IRLR014TRLPbFa SiHLR014TL-E3a IPAK (TO-251) SiHLU014-GE3 IRLU014PbF SiHLU014-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 5.
0 V TC = 25 °C TC = 100 °C Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s VDS VGS ID IDM EAS PD dV/dt TJ, Tstg Notes a.
Repetitive rating; pulse width limited by maximum j...


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