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DBU103T

Jingdao
Part Number DBU103T
Manufacturer Jingdao
Description Bipolar Junction Transistor
Published Nov 22, 2015
Detailed Description R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. DBU103T Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．...
Datasheet PDF File DBU103T PDF File

DBU103T
DBU103T

Overview
R www.
jdsemi.
cn ShenZhen Jingdao Electronic Co.
,Ltd.
DBU103T Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2．FEATURES High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE TO-92 4．Electrical Characteristics 4.
1 Absolute Maximum Ratings 1 VD 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.
2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg 650 400 9 1.
5 0.
8 18 150 -55～150 V V V A W ℃ ℃ VALUE TEST CONDITION UNIT MIN TYP MAX Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emitt...


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