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IRFP044

Vishay
Part Number IRFP044
Manufacturer Vishay
Description Power MOSFET
Published Nov 22, 2015
Detailed Description Power MOSFET IRFP044, SiHFP044 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Datasheet PDF File IRFP044 PDF File

IRFP044
IRFP044


Overview
Power MOSFET IRFP044, SiHFP044 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 95 27 46 Single 0.
028 TO-247 D S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Isolated Central Mounting Hole • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP044PbF SiHFP044-E3 IRFP044 SiHFP044 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 25 V, starting TJ = 25 °C, L = 19 µH, RG = 25 Ω, IAS = 57 A (see fig.
12).
c.
ISD ≤ 52 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d.
1.
6 mm from case.
LIMIT 60 ± 20 57 40 230 1.
2 53 180 4.
5 - 55 to + 175 300d 10 1.
1 UNIT V A W/°C mJ W V/ns °C lbf · in N·m * Pb containing terminations are not RoHS compliant, exemptions m...



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