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1PS70SB45

NXP
Part Number 1PS70SB45
Manufacturer NXP
Description Schottky barrier double diodes
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 1PS70SB40 series Schottky barrier (double) diodes Product spec...
Datasheet PDF File 1PS70SB45 PDF File

1PS70SB45
1PS70SB45

Overview
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 1PS70SB40 series Schottky barrier (double) diodes Product specification Supersedes data of 1997 Oct 28 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES • Low forward voltage • Guard ring protected • Very small SMD package • Low diode capacitance.
APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes.
DESCRIPTION Planar Schottky barrier diodes encapsulated in an SC-70 very small plastic SMD package.
Single diodes and double diodes with different pinning are available.
MARKING TYPE NUMBER 1PS70SB40 1PS70SB44 1PS70SB45 1PS70SB46 Note 1.
∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
MARKING CODE (1) 6∗3 6∗4 6∗5 6∗6 Fig.
2 1PS70SB40 single diode configuration (symbol).
1 3 2 n.
c.
MLC357 halfpage 1PS70SB40 series PINNING 1PS70SB.
.
PIN 40 1 2 3 a1 n.
c.
k1 44 a1 k2 k1, a2 45 a1 a2 k1, k2 46 k1 k2 a1, a2 Fig.
3 3 MLC358 3 1 2 1PS70SB44 diode configuration (symbol).
3 1 Top view MGD765 2 1 2 MLC359 Fig.
1 Simplified outline (SC-70) and pin configuration.
Fig.
4 1PS70SB45 diode configuration (symbol).
3 1 2 MLC360 Fig.
5 1PS70SB46 diode configuration (symbol).
1999 Apr 26 2 Philips Semiconductors Product specification Schottky barrier (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.
5 tp < 10 ms PARAMETER CONDITIONS 1PS70SB40 series MIN.
− − − − −65 − −65 MAX.
UNIT 40 120 120 200 +150 150 +150 V mA mA mA °C °C °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL Per diode VF continuous forward voltage see Fig.
6 IF = 1 mA IF = 10 mA IF = 40 mA IR τ Cd Note 1.
Pulse test: tp = 30...


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