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FLC057WG

Fujitsu
Part Number FLC057WG
Manufacturer Fujitsu
Description C-Band Power GaAs FET
Published Nov 23, 2015
Detailed Description FLC057WG FEATURES • High Output Power: P1dB = 27.0dBm(Typ.) • High Gain: G1dB = 9.0dB(Typ.) • High PAE: ηadd = 38%(Typ....
Datasheet PDF File FLC057WG PDF File

FLC057WG
FLC057WG

Overview
FLC057WG FEATURES • High Output Power: P1dB = 27.
0dBm(Typ.
) • High Gain: G1dB = 9.
0dB(Typ.
) • High PAE: ηadd = 38%(Typ.
) • Proven Reliability • Hermetic Metal/Ceramic Package C-Band Power GaAs FET DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Drain-Source Voltage Gate-Source Voltage VDS VGS Total Power Dissipation PT Tc = 25°C Storage Temperature Channel Temperature Tstg Tch Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 4.
4 and -0.
25 mA respectively with gate resistance of 1000Ω.
3.
The operating...


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