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FLC257MH-6

Eudyna Devices
Part Number FLC257MH-6
Manufacturer Eudyna Devices
Description C-Band Power GaAs FET
Published Nov 23, 2015
Detailed Description FLC257MH-6 FEATURES • High Output Power: P1dB = 34.0dBm(Typ.) • High Gain: G1dB = 9.0dB(Typ.) • High PAE: ηadd = 36%(Ty...
Datasheet PDF File FLC257MH-6 PDF File

FLC257MH-6
FLC257MH-6

Overview
FLC257MH-6 FEATURES • High Output Power: P1dB = 34.
0dBm(Typ.
) • High Gain: G1dB = 9.
0dB(Typ.
) • High PAE: ηadd = 36%(Typ.
) • Proven Reliability • Hermetic Metal/Ceramic Package C-Band Power GaAs FET DESCRIPTION The FLC257MH-6 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Drain-Source Voltage Gate-Source Voltage VDS VGS Total Power Dissipation PT Tc = 25°C Storage Temperature Tstg Channel Temperature Tch Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 17.
8 and -1.
2 mA respectively with gate resistance of 200Ω.
3.
The operatin...


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