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FLU17ZME1

Part Number	FLU17ZME1
Manufacturer	SUMITOMO
Description	L-Band Medium & High Power GaAs FET
Published	Nov 23, 2015
Detailed Description	FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm(typ.) ・High Gain: G1dB=12.5dB(...
Datasheet	FLU17ZME1 PDF File

Overview

FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.
5dBm(typ.
) ・High Gain: G1dB=12.
5dB(typ.
) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.
0GHz frequency range.
This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications.
SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 deg.
C) Item Drain-Source Voltage Symbol VDS Rating 15 Gate-Soutce Voltage VGS -5 Total Power Dissipation ...

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FLU17ZME1 L-Band Medium & High Power GaAs FET - SUMITOMO

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