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FLU10XM

Fujitsu
Part Number FLU10XM
Manufacturer Fujitsu
Description L-Band Medium & High Power GaAs FET
Published Nov 23, 2015
Detailed Description FEATURES • High Output Power: P1dB=29.5dBm (Typ.) • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic...
Datasheet PDF File FLU10XM PDF File

FLU10XM
FLU10XM

Overview
FEATURES • High Output Power: P1dB=29.
5dBm (Typ.
) • High Gain: G1dB=14.
5dB (Typ.
) • High PAE: ηadd=47% (Typ.
) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available FLU10XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range.
This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Drain-Source Voltage VDS Gate-Source Volta...


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