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1PS88SB48

NXP
Part Number 1PS88SB48
Manufacturer NXP
Description Schottky barrier diodes
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage MBD128 1PS88SB48 Schottky barrier diodes Product specification Superse...
Datasheet PDF File 1PS88SB48 PDF File

1PS88SB48
1PS88SB48

Overview
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage MBD128 1PS88SB48 Schottky barrier diodes Product specification Supersedes data of 1998 Aug 05 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier diodes FEATURES • Ultra fast switching speed • Low forward voltage • Small SMD package • Guard ring protected • Absorbs very high surge pulse • Low capacitance.
APPLICATIONS • High speed switching • Circuit protection • Voltage clamping.
DESCRIPTION The 1PS88SB48 consists of two dual high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SMD SC-88 plastic package.
1 Top view 2 3 MSA370 1PS88SB48 PINNING PIN 1 2 3 4 5 6 anode (a1) anode (a2) common cathode (k1) anode (a3) anode (a4) common cathode (k2) DESCRIPTION 6 5 4 handbook, halfpage 6 5 4 1 2 3 MGL160 Marking code: 8t5.
Fig.
1 Simplified outline (SC-88) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.
5 tp < 10 ms − − − − −65 − −65 40 120 120 200 +150 150 +150 V mA mA mA °C °C °C PARAMETER CONDITIONS MIN.
MAX.
UNIT 1999 Apr 26 2 Philips Semiconductors Product specification Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL Per diode VF continuous forward voltage see Fig.
2 IF = 1 mA IF = 10 mA IF = 40 mA IR Cd Note 1.
Pulse test: tp = 300 µs; δ = 0.
02.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Refer to SC-88 standard mounting conditions.
PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS continuous reverse current diode capacitance VR = 30 V; note 1; see Fig.
3 VR = 40 V; note 1; see Fig.
3 VR = 0; f = 1 MHz; see Fig.
5 380 500 1 1 10 5 PARAMETER CONDITIONS 1P...


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