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HY57V561620FLT-H

Part Number	HY57V561620FLT-H
Manufacturer	Hynix Semiconductor
Description	256M (16M x 16bit) Hynix SDRAM Memory
Published	Nov 27, 2015
Detailed Description	256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as ...
Datasheet	HY57V561620FLT-H PDF File

Overview

256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
2 / Dec.
2009 1 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Document Title 256Mbit (16M x16) Synchronous DRAM Revision History Revision No.
0.
1 0.
2 0.
3 History Initial Draft Define : Current value (Page 11 ~ 12) 1.
Cerrect : 1-1.
4Banks x 2Mbits x32 --> 4Banks x 4Mbits x16(Ordering information; Page 06).
1-2.
VDDQ / VSSQ : Power supply for output buffers (Page 08).
2.
Remove : Special Power consumption function of Auto TCSR(Temperature Compensated Self Refresh) and PASR(Partial Array Self Refresh).
3.
Define : AC Operating TEST condition and AC / DC Output Load circuit (page 10 & 11).
Before : Draft Date Dec.
2005 Apr.
2006 Jun.
2006 Remark Preliminary Preliminary Preliminary Output Vtt=1.
4V RT=500 Ω 30pF Output Z0 = 50Ω Vtt=1.
4V RT=50 Ω 30pF DC Output Load Circuit AC Output Load Circuit Rev 1.
2 / Dec.
2009 2 Revision No.
After : History 0.
3 Output VTT = 1.
4V RT = 50 Ohom 50pF Output DC Output Load Circuit Z0 = 50 Ohom VTT = 1.
4V RT = 50 Ohom 50pF AC Output Load Circuit 4.
Specification change : 4-1.
IOH / IOL (Page 11) Before : -2 / 2mA --> After : -4 / 4mA.
4-2.
tDH, tAH, tCKH, tCH (Page 13) Before : 1.
0ns --> After : 0.
8ns.
1.
Delete 1-1.
COMMAND TRUTH TABLE for Extended Mode Register (Page15) 2.
Insert 2-1.
DQM TRUTH TABLE (Page16) 0.
4 3.
Specitication change : 3-1.
IDD6 Before : 3 / 1.
5mA --> After : 2 / 1mA 3-2.
IDD3N Before :25mA --> After : 30mA 3-3.
tCHW / tCLW Change [HY57V561620F(L)T(P)-6x] Before :2.
0ns --> After : 2.
5ns 1.
0 Final Ver.
1.
Update 1-1.
Ordering Information table (Page 5) 200Mhz products added 1-2.
DC Characteristics II (Page 11) 200Mhz spec.
added...

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