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MBRF30150CT

SENSITRON SEMICONDUCTOR
Part Number MBRF30150CT
Manufacturer SENSITRON SEMICONDUCTOR
Description SCHOTTKY RECTIFIER
Published Nov 29, 2015
Detailed Description SENSITRON SEMICONDUCTOR MBRF30150CT Technical Data Data Sheet M2657, Rev.- Applications: MBRF30150CT SCHOTTKY RECTIF...
Datasheet PDF File MBRF30150CT PDF File

MBRF30150CT
MBRF30150CT

Overview
SENSITRON SEMICONDUCTOR MBRF30150CT Technical Data Data Sheet M2657, Rev.
- Applications: MBRF30150CT SCHOTTKY RECTIFIER • Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Mechanical Dimensions: In Inches / mm ITO-220AB • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.
sensitron.
com • E-Mail Address - sales@sensitron.
com • SENSITRON SEMICONDUCTOR MBRF30150CT Technical Data Data Sheet M2657, Rev.
- Maximum Ratings: Characteristics Peak Inverse Voltage Max.
Average Forward Peak Repetitive Forward Current(per leg) Max.
Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM IF(AV) IFRM Condition - 50% duty cycle @TC = 133°C, rectangular wave form Rated VR square wave, 20KHz TC = 133°C IFSM 8.
3 ms, half Sine pulse Max.
150 30 20 150 Units V A A A Electrical Characteristics: Characteristics Max.
Forward Voltage Drop (per leg) * Max.
Reverse Current (per leg) * Max.
Junction Capacitance (per leg) Typical Series Inductance (per leg) Max.
Voltage Rate of Change * Pulse Width < 300µs, Duty Cycle <2% Symbol VF1 VF2 IR1 IR2 CT LS dv/dt Condition @ 15 A, Pulse, TJ = 25 °C @ 30 A, Pulse, TJ = 25 °C @ 15 A, Pulse, TJ = 125 °C @ 30 A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max.
1.
00 1.
20 0.
80 0.
90 1.
0 6.
0 400 8.
0 10,000 Units V V mA mA pF nH V/µs Thermal-Mechanical Specifications: Characteristics Max.
Junction Temperature Max.
Storage Temperature Maximum Thermal Resistance Junction to Case Symbol TJ Tstg RθJC Condition - DC operation Specification ...


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