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IRF5852PbF

International Rectifier
Part Number IRF5852PbF
Manufacturer International Rectifier
Description Power MOSFET
Published Nov 30, 2015
Detailed Description l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Fr...
Datasheet PDF File IRF5852PbF PDF File

IRF5852PbF
IRF5852PbF

Overview
l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free VDSS 20 V PD - 95261A IRF5852PbF HEXFET® Power MOSFET RDS(on) max (W) 0.
090@VGS = 4.
5V 0.
120@VGS = 2.
5V ID 2.
7A 2.
2A Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required.
With...


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