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IRF7756

International Rectifier
Part Number IRF7756
Manufacturer International Rectifier
Description Power MOSFET
Published Dec 11, 2015
Detailed Description l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape ...
Datasheet PDF File IRF7756 PDF File

IRF7756
IRF7756

Overview
l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.
2mm) l Available in Tape & Reel PD -94159A VDSS -12V IRF7756 HEXFET® Power MOSFET RDS(on) max 0.
040@VGS = -4.
5V 0.
058@VGS = -2.
5V 0.
087@VGS = -1.
8V ID ±4.
3A ±3.
4A ±2.
2A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.
1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
1 2 3 4 1 = D1 2 = S1 3 = S1 4 = G1 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range 8 7 6 5 8 = D2 7 = S2 6 = S2 5 = G2 TSSOP-8 Max.
-12 -4.
3 -3.
5 -17 1.
0 0.
64 8.
0 ±8.
0 -55 to +150 Units V A W W mW/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ www.
irf.
com Max.
125 Units °C/W 1 3/17/04 IRF7756 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-to-Source Leak...


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