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IRF7757PbF

International Rectifier
Part Number IRF7757PbF
Manufacturer International Rectifier
Description Power MOSFET
Published Dec 11, 2015
Detailed Description l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape ...
Datasheet PDF File IRF7757PbF PDF File

IRF7757PbF
IRF7757PbF

Overview
l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.
2mm) l Available in Tape & Reel l Common Drain Configuration l Lead-Free Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.
2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
VDSS 20V PD-96018 IRF7757PbF HEXFET® Power MOSFET RDS(on) max (mW) 35@VGS = 4.
5V 40@VGS = 2.
5V ID 4.
8A 3.
8A 1 2 3 4 1 = S1 2 = G1 3 = S2 4 = G2 8 7 ...


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