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QM3002AN3

UBIQ
Part Number QM3002AN3
Manufacturer UBIQ
Description N-Ch 30V Fast Switching MOSFETs
Published Dec 12, 2015
Detailed Description QM3002AN3 General Description The QM3002AN3 is the highest performance trench N-ch MOSFETs with extreme high cell densi...
Datasheet PDF File QM3002AN3 PDF File

QM3002AN3
QM3002AN3

Overview
QM3002AN3 General Description The QM3002AN3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The QM3002AN3 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available N-Ch 30V Fast Switching MOSFETs Product Summery BVDSS 30V RDSON 18mΩ ID 28A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch DFN3X3 Pin Configuration D Absolute Maximum Ratings S SSG Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 10s Steady State 30 ±20 28 18 11.
8 7.
5 9.
5 6 65 72 20 20.
8 4.
2 1.
67 -55 to 150 -55 to 150 Units V V A A A A A mJ A W W ℃ ℃ Thermal Data Symbol RθJA RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 1 Typ.
------- Max.
75 30 6 Unit ℃/W ℃/W ℃/W Rev A.
02 D070711 QM3002AN3 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs R...


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