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DG5N60

DGME
Part Number DG5N60
Manufacturer DGME
Description N-Channel MOSFET
Published Dec 12, 2015
Detailed Description DG5N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG5N60N，， ，，，。 ，，。 DG5N60 is an N-channel enha...
Datasheet PDF File DG5N60 PDF File

DG5N60
DG5N60


Overview
DG5N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.
0 General Description DG5N60N，， ，，，。 ，，。 DG5N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 600 5.
0 2.
4 12 V A Ω pF Symbol Package 1 /11 ABSOLUTE MAXIMUM RATINGS (Tc=25℃) Parameter - Drain-Source Voltage Continues Drain Current ( 1) Plused Drain Current (note1) Gate-to-Source Voltage (2) Single Pulsed Avalanche Energy (note2) ( 1) Avalanche Current (note1) ( 1) Repetitive Avalanche Energy (note1) (3) Peak Diode Recovery (note3) Power Dissipation Power Dissipation Derating Factor Operating and Storage Temperature Range Maximum Temperature for Soldering Symbol VDSS Tc=25℃ ID Tc=100℃ IDM VGS EAS IAR EAR dv/dt Tc=P2D5℃ AboPvDe(D2F5) ℃ TO-251/TO-252 TO-220/TO-262 TO-220F TO-251/TO-252 TO-220/TO-262 TO-220F TJ，TSTG TL Value 600 5* 2.
5* 20 ±30 218 4.
0 10 4.
5 51 100 33 0.
39 0.
8 0.
26 150，-55～+150 300 Unit V A A V mJ A mJ V/ns W W/℃ ℃ ℃ THERMAL CHARACTERIASTIC Parameter Thermal Resistance，Junction to Case Symbol TO-251/TO-252 Rth(j-c) TO-220/TO-262 TO-220F Thermal Resistance，Junction to Ambient Rth(j-A) TO-251/TO-252 TO-220/TO-262 TO-220F * * Drain current limited by maximum junction temperature Max 2.
5 1.
25 3.
79 83 62.
5 62.
5 Unit W W/℃ 2 /11 ELECTRICAL CHARACTERISTICS Off-Characteristics Parameter - Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse Symbol BVDSS △ BVDSS/ △TJ IDSS IGSSF IGSSR Tests Conditions ID=250µA, VGS=0V ID=250µA, referenced to 25℃ VDS=600V,VGS...


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