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ME4626-G

Matsuki
Part Number ME4626-G
Manufacturer Matsuki
Description N-Channel MOSFET
Published Dec 12, 2015
Detailed Description ME4626/ME4626-G N-Channel 30-V(D-S) MOSFET Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) GENERAL DESCRIPTION...
Datasheet PDF File ME4626-G PDF File

ME4626-G
ME4626-G

Overview
ME4626/ME4626-G N-Channel 30-V(D-S) MOSFET Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) GENERAL DESCRIPTION The ME4626 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON)≦3.
5mΩ@VGS=10V ● RDS(ON)≦4.
5mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Converter ● Load Switch e Ordering Information: ME4626 (Pb-free) ME4626-G (Green p...


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