DatasheetsPDF.com

MDV1525

MagnaChip
Part Number MDV1525
Manufacturer MagnaChip
Description Single N-channel MOSFET
Published Dec 12, 2015
Detailed Description MDV1525 – Single N-Channel Trench MOSFET 30V MDV1525 Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ General Descripti...
Datasheet PDF File MDV1525 PDF File

MDV1525
MDV1525


Overview
MDV1525 – Single N-Channel Trench MOSFET 30V MDV1525 Single N-channel Trench MOSFET 30V, 24A, 10.
1mΩ General Description The MDV1525 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDV1525 is suitable for DC/DC converter and general purpose applications.
Features VDS = 30V ID = 24A @VGS = 10V RDS(ON) < 10.
1mΩ @VGS = 10V < 14.
0mΩ @VGS = 4.
5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PDFN33 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case May.
2011.
Version1.
2 1 G S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 30 ±20 37.
2 24 24 13.
8(3) 11.
1(3) 60 24.
5 15.
6 3.
4(3) 2.
2(3) 48 -55~150 Unit V V A A W mJ oC Symbol RθJA RθJC Rating 36 5.
1 Unit oC/W MagnaChip Semiconductor Ltd.
MDV1525 – Single N-Channel Trench MOSFET 30V Ordering Information Part Number MDV1525URH Temp.
Range -55~150oC Package PowerDFN33 Packing Tape & Reel Quantity 5000 units Rohs Status Halogen Free Electrical Characteristics (TJ = 25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Symbol BVDSS VGS(th) IDSS IGSS Drain-Source ON Resistance RDS(ON) Forward Transconductance Dynamic Characteristics Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Drain-Source Body Diode Characteristics Source-D...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)