DatasheetsPDF.com

Si3459BDV

Vishay
Part Number Si3459BDV
Manufacturer Vishay
Description P-Channel MOSFET
Published Dec 18, 2015
Detailed Description New Product P-Channel 60-V (D-S) MOSFET Si3459BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.216 at VGS...
Datasheet PDF File Si3459BDV PDF File

Si3459BDV
Si3459BDV

Overview
New Product P-Channel 60-V (D-S) MOSFET Si3459BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
216 at VGS = - 10 V - 60 0.
288 at VGS = - 4.
5 V ID (A)d - 2.
9 - 2.
5 Qg (Typ.
) 4.
4 nC TSOP-6 Top View FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch S D1 6D 3 mm D G 25 34 2.
85 mm D S Marking Code AS XXX Lot Traceability and Date Code Part # Code Ordering Information: Si3459BDV-T1-E3 (Lead (Pb)-free) Si3459BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operat...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)