DatasheetsPDF.com

QM6006D

UBIQ
Part Number QM6006D
Manufacturer UBIQ
Description N-Ch 60V Fast Switching MOSFETs
Published Dec 20, 2015
Detailed Description General Description The QM6006D is the highest performance trench N-ch MOSFETs with extreme high cell density , which pr...
Datasheet PDF File QM6006D PDF File

QM6006D
QM6006D

Overview
General Description The QM6006D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The QM6006D meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available QM6006D N-Ch 60V Fast Switching MOSFETs Product Summery BVDSS 60V RDSON 18mΩ ID 35A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z LCD/LED back light TO252 Pin Configuration D Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range GDS Rating 60 ±20 35 22 7.
4 6 80 67 28 45 2 -55 to 150 -55 to 150 Units V V A A A A A mJ A W W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 1 Typ.
----- Max.
62 2.
8 Unit ℃/W ℃/W Rev A.
02 D082911 QM6006D N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductan...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)