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QM02N65U

UBIQ
Part Number QM02N65U
Manufacturer UBIQ
Description N-Ch 650V Fast Switching MOSFETs
Published Dec 26, 2015
Detailed Description QM02N65U 1 2010-04-27 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM02N65U is the highest perfo...
Datasheet PDF File QM02N65U PDF File

QM02N65U
QM02N65U

Overview
QM02N65U 1 2010-04-27 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM02N65U is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The QM02N65U meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 650V RDSON 8Ω ID 2A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LED Lighting z Adapter/charger TO251 Pin Configuration Absolute Maximum Ratings G DS Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 650 ±30 2 1.
3 4 16 3.
4 40 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case1 Typ.
----- Max.
62 3 Unit ℃/W ℃/W Rev A.
01 D102209 1 QM02N65U 2 2010-04-27 - 2 - N-Ch 650V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Qg Total Gate Charge (-4.
5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Tr Rise Time Td(off) Turn-Off Delay Time ...


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