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IRF7303QPBF

International Rectifier
Part Number IRF7303QPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Dec 28, 2015
Detailed Description l Advanced Process Technology l Ultra Low On-Resistance l Dual N Channel MOSFET l Surface Mount l Available in Tape & Re...
Datasheet PDF File IRF7303QPBF PDF File

IRF7303QPBF
IRF7303QPBF

Overview
l Advanced Process Technology l Ultra Low On-Resistance l Dual N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.
This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
PD - 96103A IRF7303QPbF HEXFET® Power MOSFET S1 1 G1 2 8 D1 7 D1 VDSS = 30V S2 3 G2 4 6 D2 5 D2 RDS(on) = 0.
050Ω Top View ...


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