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IRF7304QPBF

International Rectifier
Part Number IRF7304QPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Dec 28, 2015
Detailed Description PD - 96104A IRF7304QPbF l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Moun...
Datasheet PDF File IRF7304QPBF PDF File

IRF7304QPBF
IRF7304QPBF


Overview
PD - 96104A IRF7304QPbF l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free S1 G1 S2 G2 Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniquestoachieveextremelylow on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.
This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
HEXFET® Power MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 Top View VDSS = -20V RDS(on) = 0.
090Ω SO...



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