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QM2415SM8

UBIQ
Part Number QM2415SM8
Manufacturer UBIQ
Description P-Ch 20V Fast Switching MOSFETs
Published Dec 30, 2015
Detailed Description QM2415SM8 P-Ch 20V Fast Switching MOSFETs General Description The QM2415SM8 is the highest performance trench P-ch MOSF...
Datasheet PDF File QM2415SM8 PDF File

QM2415SM8
QM2415SM8

Overview
QM2415SM8 P-Ch 20V Fast Switching MOSFETs General Description The QM2415SM8 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The QM2415SM8 meet the RoHS and Green Product requirement , with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Product Summery BVDSS -20V RDSON 130mΩ ID -3.
3A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch PRPAK 3X2 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V1 Continuous Drain Current, VGS @ 4.
5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Rating -20 ±8 -3.
3 -2 -7 1.
79 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Typ.
----- Max.
110 70 Unit ℃/W ℃/W Rev A.
01 D110209 1 QM2415SM8 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) IDSS IGSS gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Transconductance Total Gate Charge (-4.
5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=-250uA Reference to 25℃ ,...


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