DatasheetsPDF.com

QM2421M3

UBIQ
Part Number QM2421M3
Manufacturer UBIQ
Description P-Ch 20V Fast Switching MOSFETs
Published Dec 31, 2015
Detailed Description QM2421M3 P-Ch 20V Fast Switching MOSFETs General Description The QM2421M3 is the highest performance trench P-ch MOSFET...
Datasheet PDF File QM2421M3 PDF File

QM2421M3
QM2421M3

Overview
QM2421M3 P-Ch 20V Fast Switching MOSFETs General Description The QM2421M3 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The QM2421M3 meet the RoHS and Green Product requirement with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS -20V RDSON 32mΩ ID -24A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch PRPAK3X3 Pin Configuration D Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.
5V1 Continuous Drain Current, VGS @ -4.
5V1 Continuous Drain Current, VGS @ -4.
5V1 Continuous Drain Current, VGS @ -4.
5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range SS SG Rating -20 ±12 -24 -15.
3 -6.
1 -4.
9 -60 26 1.
67 -55 to 150 -55 to 150 Units V V A A A A A W W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Typ.
----- Max.
75 4.
8 Unit ℃/W ℃/W Rev A.
01 D061711 1 QM2421M3 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Total Gate Charge (-4.
5V) Gate-Source Charge Gate-Drain Charge Turn-O...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)