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QM3403K

Part Number	QM3403K
Manufacturer	UBIQ
Description	P-Ch 30V Fast Switching MOSFETs
Published	Jan 1, 2016
Detailed Description	QM3403K P-Ch 30V Fast Switching MOSFETs General Description The QM3403K is the highest performance trench P-ch MOSFETs ...
Datasheet	QM3403K PDF File

Overview

QM3403K P-Ch 30V Fast Switching MOSFETs General Description The QM3403K is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The QM3403K meet the RoHS and Green Product requirement with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z Green Device Available Product Summery BVDSS -30V RDSON 95mΩ ID -2.
6A Applications z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOT 23 Pin Configuration D Absolute Maximum Ratings G Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.
5V1 Continuous Drain Current, VGS @ -4.
5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 1 S Rating 10s Steady State -30 ±12 -3 -2.
6 -2.
4 -2.
1 -11 1.
32 1 0.
84 0.
64 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Typ.
------- Max.
125 95 80 Unit ℃/W ℃/W ℃/W Rev A.
04 D051911 QM3403K P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Total Gate Charge (-4.
5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time T...

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