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Si6404DQ

Vishay
Part Number Si6404DQ
Manufacturer Vishay
Description N-Channel MOSFET
Published Jan 6, 2016
Detailed Description N-Channel 30-V (D-S) MOSFET Si6404DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.009 at VGS = 10 V 30 0...
Datasheet PDF File Si6404DQ PDF File

Si6404DQ
Si6404DQ

Overview
N-Channel 30-V (D-S) MOSFET Si6404DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
009 at VGS = 10 V 30 0.
010 at VGS = 4.
5 V 0.
014 at VGS = 2.
5 V ID (A) 11 10 8.
8 FEATURES • Halogen-free • TrenchFET® Power MOSFETS: 2.
5 V Rated • 30 V VDS APPLICATIONS • Battery Switch • Charger Switch RoHS COMPLIANT D TSSOP-8 D1 S2 S3 G4 Si6404DQ Top View 8D 7S 6S 5D Ordering Information: Si6404DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) * Source Pins 2, 3, 6 and 7 must be tied common.
G S* N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 11 8.
6 8.
9 6.
9 Pulsed Drain Current (10 µs Pulse Width) IDM 30 Continuous Source Current (Diode Conduction)a IS 1.
5 0.
95 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.
75 1.
08 1.
14 0.
69 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a.
Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 55 95 35 Maximum 70 115 45 Unit °C/W Document Number: 71440 S-80682-Rev.
B, 31-Mar-08 www.
vishay.
com 1 Si6404DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70 °C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 11 A VGS = 4.
5 V, ID = 10 A VGS = 2.
5 V, ID = 8.
8 A VDS = 10 V, ID = 11 A IS = 1.
5 A, VGS = 0 V Total Gate Charge Gate-Source Charge Gate-Dra...


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