DatasheetsPDF.com

Si6465DQ

Vishay
Part Number Si6465DQ
Manufacturer Vishay
Description P-Channel MOSFET
Published Jan 6, 2016
Detailed Description P-Channel 1.8-V (G-S) MOSFET Si6465DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = - 4.5 V ...
Datasheet PDF File Si6465DQ PDF File

Si6465DQ
Si6465DQ

Overview
P-Channel 1.
8-V (G-S) MOSFET Si6465DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
012 at VGS = - 4.
5 V - 8 0.
017 at VGS = - 2.
5 V 0.
025 at VGS = - 1.
8 V ID (A) ± 8.
8 ± 7.
4 ± 6.
0 FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 1.
8 V Rated RoHS COMPLIANT S* D1 S2 S3 G4 TSSOP-8 Si6465DQ Top View 8D 7S 6S 5D Ordering Information: Si6465DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G * Source Pins 2, 3, 6 and 7 must be tied common D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a, b IS Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit -8 ±8 ± 8.
8 ± 7.
1 ± 30 - 1.
5 1.
5 1.
0 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a.
Surface Mounted on FR4 board.
b.
t ≤ 10 s.
t ≤ 10 s Steady State Symbol RthJA Typical 90 Maximum 83 Unit °C/W Document Number: 70812 S-80682-Rev.
D, 31-Mar-08 www.
vishay.
com 1 Si6465DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 8 V VDS = - 6.
4 V, VGS = 0 V VDS = - 6.
4 V, VGS = 0 V, TJ = 70 °C VDS ≥ - 5 V, VGS = - 4.
5 V VGS = - 4.
5 V, ID = - 8.
8 A VGS = - 2.
5 V, ID = - 7.
4 A VGS = - 1.
8 V, ID = - 6.
0 A VDS = - 5 V, ID = - 8.
8 A IS = - 1.
5 A, VGS = 0 V Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)