DatasheetsPDF.com

CPC3703

Clare
Part Number CPC3703
Manufacturer Clare
Description N-Channel Depletion-Mode Vertical DMOS FETs
Published Jan 8, 2016
Detailed Description BVDSX/ BVDGX 250V RDS(ON) (max) 4Ω IDSS (min) 360mA Package SOT-89 Features • Depletion mode device offers low RDS(O...
Datasheet PDF File CPC3703 PDF File

CPC3703
CPC3703

Overview
BVDSX/ BVDGX 250V RDS(ON) (max) 4Ω IDSS (min) 360mA Package SOT-89 Features • Depletion mode device offers low RDS(ON) at cold temperatures • Low on resistance 4 ohms max.
at 25ºC • High input impedance • High breakdown voltage 250V • Low VGS(off) voltage -1.
6 to -3.
9V • Small package size SOT89 Applications • Ignition Modules • Normally-on Switches • Solid State Relays • Converters • Telecommunications • Power Supply Package Pinout G D S D (SOT89) CPC3703 N-Channel Depletion-Mode Vertical DMOS FETs Description The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process.
The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.
Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications.
The CPC3703 is a highly reliable FET device that has been used extensively in Clare’s Solid State Relays for industrial and telecommunications applications.
This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules.
The CPC3703 offers a low, 4Ω maximum, on-state resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT89 package.
As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
Ordering Information Part # CPC3703C CPC3703CTR Description SOT89 (100/Tube) SOT89 (2000/Reel) Circuit Symbol D G S Pb RoHS 2002/95/EC DS-CPC3703-R03 e3 www.
clare.
com 1 CPC3703 Absolute Maximum Ratings Parameter Ratings Drain-to-Source Voltage 250 Gate-to-Source Voltage Total Package Dissipation 1 ±20 1.
6 Operational Temperature -55 to +125 Storage Temperature -55 to +125 Units V V W ºC ºC 1 Mounted on 1"x1" FR4 board.
Absolute Maximum Ratings are stress ratings.
Stresses in exce...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)