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PH5330E

NXP
Part Number PH5330E
Manufacturer NXP
Description N-Channel MOSFET
Published Jan 8, 2016
Detailed Description PH5330E N-channel TrenchMOS logic level FET Rev. 02 — 19 October 2009 Product data sheet 1. Product profile 1.1 Gener...
Datasheet PDF File PH5330E PDF File

PH5330E
PH5330E

Overview
PH5330E N-channel TrenchMOS logic level FET Rev.
02 — 19 October 2009 Product data sheet 1.
Product profile 1.
1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.
2 Features and benefits „ Higher operating power due to low thermal resistance „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources 1.
3 Applications „ DC-to-DC convertors „ Notebook computers „ Portable equipment „ Switched-mode power supplies 1.
4 Quick reference data Table 1.
Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 20 A; VDS =...


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