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IXTQ160N085T

IXYS
Part Number IXTQ160N085T
Manufacturer IXYS
Description Power MOSFET
Published Jan 9, 2016
Detailed Description Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160...
Datasheet PDF File IXTQ160N085T PDF File

IXTQ160N085T
IXTQ160N085T

Overview
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) 85 V 160 A 6.
0 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS V DGR VGSM ID25 IDRMS IDM IAR E AS dv/dt PD TJ TJM Tstg TL M d Weight TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 10 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 85 V 85 V ±20 V 160 A 75 A 350 A 75 A 1.
0 J 3 V/ns 360 -55 .
.
.
+175 175 -55 .
.
.
+150 300 260 W °C °C °C °C °C 1.
13/10 Nm/lb.
in.
5.
5 g 4g 3g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA Characteristic Values Min.
Typ.
Max.
85 V V GS(th) V = V ,...


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